Impact of polarized illumination on high NA imaging in ArF immersion lithography at 45 nm node

被引：4
|
作者：
Yuan, Qiongyan [1 ,2 ]
Wang, Xiangzhao [1 ]
Qiu, Zicheng [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Informat Opt Lab, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
OPTIK | 2009年 / 120卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Immersion lithography; Polarized illumination; Normalized image log slope; Exposure defocus window; RESOLUTION ENHANCEMENT;
D O I：
10.1016/j.ijleo.2007.09.009
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Immersion lithography has been considered as the mainstream technology to extend the feasibility of optical lithography to further technology nodes. Using proper polarized illumination in an immersion lithographic tool is a powerful means to enhance the image quality and process capability for high numerical aperture (NA) imaging. In this paper, the impact of polarized illumination on high NA imaging in ArF immersion lithography for 45 nm dense lines and semi-dense lines is studied by PROLITH simulation. The normalized image log slope (NILS) and exposure defocus (ED) window are simulated under various polarized illumination modes, and the impact of polarized illumination on image quality and process latitude is analyzed. (C) 2007 Elsevier GmbH. All rights reserved.
引用
收藏
页码：325 / 329
页数：5
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