Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

被引：7

作者：

Chaldyshev, VV ^{[1
]}

Bert, NA ^{[1
]}

Preobrazhenskii, VV ^{[1
]}

Putyato, MA ^{[1
]}

Semyagin, BR ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK 630090,RUSSIA

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1997年 / 238卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

As clusters; low temperature; Ostwald ripening;

D O I：

10.1016/S0921-5093(97)00442-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two-dimensional (2D) sheets of As clusters were produced in the crystalline GaAs matrix using molecular-beam epitaxy (MBE) at low temperature, indium delta-doping, and subsequent annealing. The sheets were inserted into a 3D array of arsenic clusters. Ostwald ripening in 2D and 3D cluster systems was studied using cross-sectional transmission electron microscopy. The cluster growth rate was found to be lower in the 2D system, than in the 3D one. The thickness of the 2D sheets increased with cluster coarsening and was evaluated as double average cluster diameter. The limitations were found for design of structures with built-in 2D sheets of As clusters separated by cluster-free GaAs matrix. (C) 1997 Elsevier Science S.A.

引用

页码：148 / 151

页数：4

共 50 条

[1] THEORY OF OSTWALD RIPENING FOR TWO-DIMENSIONAL SYSTEMS
ZHENG, Q
GUNTON, JD
PHYSICAL REVIEW A, 1989, 39 (09): : 4848 - 4853
[2] Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs
Bert, NA
Cherkashin, NA
Chaldyshev, VV
Claverie, A
Preobrazhenskii, VV
Putyato, MA
Sernyagin, BR
Werner, P
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, 2002, : 233 - 236
[3] Numerical analysis of Ostwald ripening in two-dimensional systems
Dubrovskii, V. G.
Kazansky, M. A.
Nazarenko, M. V.
Adzhemyan, L. T.
JOURNAL OF CHEMICAL PHYSICS, 2011, 134 (09):
[4] Ostwald ripening of faceted two-dimensional islands
Kaganer, V. M.
Braun, W.
Sabelfeld, K. K.
PHYSICAL REVIEW B, 2007, 76 (07)
[5] Ostwald ripening of two-dimensional homoepitaxial islands
Hausser, F
Voigt, A
PHYSICAL REVIEW B, 2005, 72 (03)
[6] Three-dimensional simulations of Ostwald ripening with elastic effects
Sagui, C
Orlikowski, D
Somoza, AM
Roland, C
PHYSICAL REVIEW E, 1998, 58 (04) : R4092 - R4095
[7] Three-dimensional simulations of Ostwald ripening with elastic effects
Sagui, Celeste
Orlikowski, Daniel
Somoza, Andres M.
Roland, Christopher
Physical Review E. Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, 1998, 58 (04):
[8] Universality of Persistence Exponents in Two-Dimensional Ostwald Ripening
Soriano, Jordi
Braslavsky, Ido
Xu, Di
Krichevsky, Oleg
Stavans, Joel
PHYSICAL REVIEW LETTERS, 2009, 103 (22)
[9] A simulation of two-dimensional Ostwald ripening on silver electrodes
Luque, Noelia B.
Ibach, Harald
Poetting, Kay
Schmickler, Wolfgang
ELECTROCHIMICA ACTA, 2010, 55 (19) : 5411 - 5413
[10] Ostwald ripening of two-dimensional islands on Si(001)
Bartelt, NC
Theis, W
Tromp, RM
PHYSICAL REVIEW B, 1996, 54 (16): : 11741 - 11751

← 1 2 3 4 5 →