Upper critical fields of MgB2 thin films

被引：5
|
作者：
Ferrando, V
Bernini, C
Manfrinetti, P
Marré, D
Putti, M
Tarantini, C
Ferdeghini, C
机构：
[1] Univ Genoa, INFM, LAMIA, I-16146 Genoa, Italy
[2] Univ Genoa, Dipartimento Fis, I-16146 Genoa, Italy
[3] Univ Genoa, Dipartimento Chim & Chim Ind, I-16146 Genoa, Italy
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2004年 / 408卷
关键词：
D O I：
10.1016/j.physc.2004.02.059
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 muOmega cm and T-c from 29.5 to 38.8 K were measured up to 28 T. H-c2(T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：127 / 129
页数：3
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