Microstructural properties of Co thin films grown on p-GaAs (100) substrates

被引：4

作者：

Lee, KH

Lee, HS

Lee, JY

Kim, TW

Yoo, KH

Yoon, YS

机构：

[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[4] Kyung Hee Univ, Res Inst Basic Sci, Seoul 130701, South Korea

[5] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 130650, South Korea

来源：

MATERIALS RESEARCH BULLETIN | 2004年 / 39卷 / 10期

关键词：

thin film; microstructure;

D O I：

10.1016/j.materresbull.2004.04.036

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microstructual properties of Co thin films grown on p-GaAs (100) substrates at room temperature by ion beam-assisted deposition were investigated. An atomic force microscopy image showed that the root mean square of the average surface roughness of the Co film was 32.2 Angstrom, and X-ray diffraction and selected area diffraction pattern measurements showed that Co film layers grown on GaAs (100) substrates were polycrystalline. A bright-field transmission electron microscopy image showed that the Co/p-GaAs (100) heterointerface grown at room temperature was sudden. These results provide important information on the microstructural properties for Co thin films grown on p-GaAs (100) substrates at room temperature. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1369 / 1374

页数：6

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