Microwave properties and microstructure of Y1Ba2Cu3O7 thin films

被引：0
|
作者：
Savvides, N [1 ]
Katsaros, A [1 ]
Reilly, D [1 ]
Foley, C [1 ]
Leong, K [1 ]
Ceremuga, J [1 ]
机构：
[1] JAMES COOK UNIV N QUEENSLAND,TOWNSVILLE,QLD 4811,AUSTRALIA
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1996年 / 46卷
关键词：
D O I：
10.1007/BF02583862
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The microwave properties of high-J(c) (similar to 10(6) A cm(-)2()) c-axis Y1Ba2Cu3O7 thin films on MgO(100) substrates were investigated as a function of the film microstructure. Measurements at 77 K, using a sapphire dielectric resonator operated in the TE(011) mode, show that the microwave surface resistance, R(s), at 10 GHz increases from 0.8 m Ohm for very smooth films to 3-4 m Ohm for films with large scale microstructural defects such as outgrowths and holes or pits. The unloaded quality factor Q(u) decreases from about 96,000 to below 50,000.
引用
收藏
页码：1109 / 1110
页数：2
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