Watt-level, high wall plug efficiency, continuous-wave room temperature quantum cascade laser emitting at 7.7μm

被引:17
|
作者
Wang, Huan [1 ,2 ]
Zhang, Jinchuan [1 ]
Cheng, Fengmin [1 ,2 ,3 ]
Zhuo, Ning [1 ]
Zhai, Shenqiang [1 ]
Liu, Junqi [1 ,2 ]
Wang, Lijun [1 ,2 ]
Liu, Shuman [1 ,2 ]
Liu, Fengqi [1 ,2 ,3 ]
Wang, Zhanguo [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, POB 912, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
基金
中国国家自然科学基金;
关键词
MU-M; HIGH-POWER; OPERATION;
D O I
10.1364/OE.412943
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this article, a InP based strain-balanced In0.58Ga0.42As/In0.47Al0.53As quantum cascade laser emitting at 7.7 mu m is reported. The active region is based on a slightly-diagonal bound to continuum design with 50 cascade stages and a low voltage defect Delta(inj) of 96 meV. By optimizing the active region and waveguide structure, the waveguide loss alpha(w) of 1.18cm(-1) are obtained, which contribute to a high wall-plug efficiency (WPE) of 9.08% and low threshold current of only 1.09 kA/cm(2) in continuous-wave(CW) operation at 293K. The maximum single facet output power of 1.17W in CW operation and 2.3W in pulsed operation are measured at 293K. The narrow ridge and buried ridge structure epi-side-down-mounted on the diamond heatsink improved the heat dissipation of the device. A beam of pure zero order mode and a broad external-cavity tuning range from 7.16 mu m to 8.16 mu m are also achieved. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:40155 / 40163
页数:9
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