Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm

被引:4
|
作者
Zhang, Yi [1 ,2 ,3 ]
Cheng, Fu-Hui [1 ,2 ,3 ]
Yang, Cheng Ao [1 ,2 ,3 ]
Xie, Sheng-Wen [1 ,2 ,3 ]
Huang, Shu-Shan [1 ,2 ,3 ]
Yuan, Ye [1 ,2 ,3 ]
Shang, Jin-Ming [1 ,2 ,3 ]
Zhang, Yu [1 ,2 ,3 ]
Xu, Ying-Qiang [1 ,2 ,3 ]
Ni, Hai-Qiao [1 ,2 ,3 ]
Niu, Zhi-Chuan [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R China
[3] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
interband cascade laser; mid-infrared; GaSb-based; type-II W quantum well; HIGH-POWER;
D O I
10.1088/1674-1056/27/12/124207
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report a type-II GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the 'W' configuration of the active quantum wells and the 'Carrier Rebalancing' method in the electron injector. The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink. The 25-mu m-wide, 3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T = 15 degrees C. And a low threshold current density of 267 A/cm(2) is achieved. The emission wavelength of the ICL is 3452.3 nm at 0.5 A.
引用
收藏
页数:4
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