Evaluation of bulk trap density of tris-(8-hydroxyquinoline) aluminum

被引：6
|
作者：
Mizuo, S [1 ]
Tabatake, S [1 ]
Naka, S [1 ]
Okada, H [1 ]
Onnagawa, H [1 ]
机构：
[1] Toyama Univ, Fac Engn, Toyama 9308555, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 03期
关键词：
D O I：
10.1063/1.1483922
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The bulk trap density of tris-(8-hydroxyquinoline) aluminum was evaluated by the differential method, and was found to be approximately 10(16) cm(-3) at the Fermi level of 0.45-0.60 eV below the lowest unoccupied molecular orbital (LUMO). This value increased with an increase in the Fermi energy. The activation energy of the current density changed with the applied voltage, i.e., traps of various energy levels contribute to conduction. The existence of a shallow trap at the Fermi level of 0.55 eV below the LUMO was confirmed. (C) 2002 American Institute of Physics.
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收藏
页码：1450 / 1452
页数：3
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