Substitutional C incorporation into Si1-yCy alloys using novel carbon source, 1,3-disilabutane

被引：1

作者：

Yagi, S

Abe, K

Yamada, A

Konagai, M

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 7A期

关键词：

Si1-yCy; strained group IV alloy; low-temperature epitaxy; PECVD; 1,3-disilabutane;

D O I：

10.1143/JJAP.43.4153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new carbon source, 1,3-disilabutane (H3Si-CH2-SiH2-CH3:1,3-DSB), is proposed for use in the growth of epitaxial Si1-yCy films with high C substitutionality. The Si1-yCy films have been deposited by plasma-enhanced chemical vapor deposition (PECVD). The Si1-yCy films grown using C2H2 or SiH2(CH3)(2) show a reduction in C substitutionality when total C content is more than 2%, whereas they show a marked improvement in C substitutionality for C contents up to 2.5% using 1,3-DSB as a C source.

引用

页码：4153 / 4154

页数：2

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