Substitutional C incorporation into Si1-yCy alloys using novel carbon source, 1,3-disilabutane

被引：1
|
作者：
Yagi, S
Abe, K
Yamada, A
Konagai, M
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 7A期
关键词：
Si1-yCy; strained group IV alloy; low-temperature epitaxy; PECVD; 1,3-disilabutane;
D O I：
10.1143/JJAP.43.4153
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new carbon source, 1,3-disilabutane (H3Si-CH2-SiH2-CH3:1,3-DSB), is proposed for use in the growth of epitaxial Si1-yCy films with high C substitutionality. The Si1-yCy films have been deposited by plasma-enhanced chemical vapor deposition (PECVD). The Si1-yCy films grown using C2H2 or SiH2(CH3)(2) show a reduction in C substitutionality when total C content is more than 2%, whereas they show a marked improvement in C substitutionality for C contents up to 2.5% using 1,3-DSB as a C source.
引用
收藏
页码：4153 / 4154
页数：2
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