A Quantum Transport Approach to the Calculation of Gate Tunnelling Current in Nano-Scale FD SOI MOSFETs

被引：0

作者：

Hasani, Fargol ^{[1
]}

Fathipour, Morteza ^{[1
]}

Karimi, Fatemeh ^{[2
]}

机构：

[1] Univ Tehran, Device Modelling & Simulat lab, Fac ECE, Tehran 14174, Iran

[2] Azad Univ Tehran, Fac ECE, Device Res Grp, Tehran 14174, Iran

来源：

ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON | 2009年

关键词：

Nanotransistor; modeling; dissipative transport; scattering self energy; gate tunneling current;

D O I：

10.1109/ULIS.2009.4897604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As integrated circuits (ICs) become more densely packed with transistors, the conventional MOSFETs approach their physical limits of operation. Thus many novel device structures are being extensively explored. As a substitute Ultra thin Nano scale MOSFETs are one of the potential candidates. It is very attractive one-dimensional material and is useful for future nonoelectronic applications. We have used quantum transport to investigate the effect of scattering due to coupling of the gale contact on the gale tunnelling current. We have developed a proper self energy term which is included within the Hamiltonian formalism for the Poisson Schrodinger solver. It will manifest the coupling of scattering parameter on the gale tunnelling current.

引用

页码：337 / +

页数：2

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