Annealing effect on interlayer exchange coupling in perpendicularly magnetized synthetic antiferromagnetic structure based on Co/Pd multilayers with ultrathin Ru spacer
被引:4
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作者:
Nakano, Takafumi
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Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
Univ Exeter, Dept Phys & Astron, Exeter EX4 4QL, Devon, EnglandTohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
Nakano, Takafumi
[1
,3
]
Oogane, Mikihiko
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Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, JapanTohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
Oogane, Mikihiko
[1
]
Ando, Yasuo
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Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808579, JapanTohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
Ando, Yasuo
[1
,2
]
机构:
[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808579, Japan
Perpendicularly magnetized synthetic antiferromagnetic (p-SAF) structures exhibiting large exchange field (H-ex) values have been widely studied for application to spintronic devices. We investigated magnetic properties of p-SAF structures based on Co/Pd multilayers with an ultrathin Ru spacer at various annealing temperatures (T-a). The [Co/Pd]-based p-SAF structures exhibited large H-ex values of the order of kOe up to T-a = 350 degrees C. We clarified that H-ex in the p-SAF structures significantly degrades with increasing T-a mainly owing to a marked reduction in exchange coupling energy (J(ex)). These results demonstrate that [Co/Pd]-based p-SAF structures exhibit sufficiently large H-ex values for device applications and that the annealing stability is predominantly determined by J(ex). (C) 2018 The Japan Society of Applied Physics
机构:
Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R ChinaYanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China
Liu, Z. Y.
Xu, B.
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机构:Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China
Xu, B.
He, J. L.
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机构:Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China
He, J. L.
Yu, D. L.
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机构:Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China
Yu, D. L.
Tian, Y. J.
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机构:Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China
Tian, Y. J.
Yu, G. H.
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机构:Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China
机构:
E China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China
E China Normal Univ, Dept Phys, Shanghai 200062, Peoples R ChinaFudan Univ, Dept Opt Sci & Engn, Shanghai Ultra Precis Opt Engn Ctr, Shanghai 200433, Peoples R China
机构:
Fudan Univ, Dept Opt Sci & Engn, Shanghai Ultra Precis Opt Engn Ctr, Shanghai 200433, Peoples R China
E China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China
E China Normal Univ, Dept Phys, Shanghai 200062, Peoples R ChinaFudan Univ, Dept Opt Sci & Engn, Shanghai Ultra Precis Opt Engn Ctr, Shanghai 200433, Peoples R China