Thick SOI films by rapid thermal processing for high voltage integrated circuits

被引：0
|
作者：
Dilhac, JM
Cornibert, L
Charitat, G
Nolhier, N
Zerrouk, D
Ganibal, C
机构：
来源：
PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1997年 / 97卷 / 23期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We present a structure for electrical isolation of control devices used in High Voltage Integrated Circuits. This structure combines junction and dielectric isolation for vertical and lateral isolation respectively. The isolation performances are first theoretically assessed to estimate the oxide thickness required. Then, a method for creating the buried oxide layer is presented and experimentally evaluated. Crystal quality and electrical parameters of the thick SOI films are presented.
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页码：245 / 250
页数：6
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