Effect of penetrating irradiation on polarization reversal in PZT thin films

被引：2
|
作者：
Kuznetsov, D. K.
Shur, V. Ya. [1 ]
Baturin, I. S.
Menou, N.
Muller, Ch.
Schneller, T.
Sternberg, A.
机构：
[1] Ural State Univ, Ferroelect Lab, Ekaterinburg 620083, Russia
[2] Univ S Toulon Var, CNRS, UMR 6137, L2MP, F-83857 La Garde, France
[3] IWE Rhein Westf Techn Hsch Aachen, D-52074 Aachen, Germany
[4] Univ Latvia, Inst Solid State Phys, LV-1063 Riga, Latvia
来源：
FERROELECTRICS | 2006年 / 340卷
关键词：
switching current; synchrotron X-ray diffraction; fatigue; wake-up; electron irradiation; cyclic switching;
D O I：
10.1080/00150190600889288
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spatially non-uniform imprint behavior induced by X-ray synchrotron, electron, and neutron irradiation has been investigated in Pb(Zr,Ti)O-3 thin films. The obtained effects have been explained as a result of acceleration of the bulk screening process induced by irradiation. It has been shown that the spatial distribution of the internal bias field is determined by the domain pattern existing during irradiation. The microstructural changes in the structural characteristics during fatigue cycling have been revealed by high resolution synchrotron X-ray diffraction experiments. Their correlation with the evolution of the switching characteristics has been revealed and discussed.
引用
收藏
页码：161 / 167
页数：7
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