Carrier Statistics and Quantum Capacitance Models of Graphene Nanoscroll

被引:11
|
作者
Khaledian, M. [1 ]
Ismail, Razali
Saeidmanesh, M. [1 ]
Ahmadi, M. T. [2 ]
Akbari, E. [3 ]
机构
[1] Univ Teknol Malaysia, Fac Elect Engn, Dept Elect Engn, Skudai 81310, Johor Bahru, Malaysia
[2] Urmia Univ, Nanotechnol Res Ctr, Dept Phys, Nanoelect Grp, Orumiyeh 57147, Iran
[3] Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot CAIRO, Skudai 81310, Johor Bahru, Malaysia
关键词
CARBON NANOSCROLLS; FABRICATION;
D O I
10.1155/2014/762143
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
As a new category of quasi-one-dimensional materials, graphene nanoscroll (GNS) has captivated the researchers recently because of its exceptional electronic properties like having large carrier mobility. In addition, it is admitted that the scrolled configurations for graphene indicate larger stability concerning the energy, as opposed to their counterpart planar configurations like nanoribbon, nanotube, and bilayer graphene. By utilizing a novel analytical approach, the current paper introduces modeling of the density of state (DOS), carrier concentration, and quantum capacitance for graphene nanoscroll (suggested schematic perfect scroll-like Archimedes spiral). The DOS model was derived at first, while it was later applied to compute the carrier concentration and quantum capacitance model. Furthermore, the carrier concentration and quantum capacitance were modeled for both degenerate and nondegenerate regimes, along with examining the effect of structural parameters and chirality number on the density of state and carrier concentration. Latterly, the temperature effect on the quantum capacitance was studied too.
引用
收藏
页数:6
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