Foundry 0.13 μm CMOS modeling for MS/μWave SOC design at 10 GHz and beyond

被引：2

作者：

Yang, MT ^{[1
]}

Yeh, TJ ^{[1
]}

Wang, YJ ^{[1
]}

Ho, PPC ^{[1
]}

Lin, YR ^{[1
]}

Kuo, DCW ^{[1
]}

Voinigescu, SP ^{[1
]}

Tazlauanu, M ^{[1
]}

Chia, YT ^{[1
]}

Young, KL ^{[1
]}

机构：

[1] TSMC, Hsinchu 30077, Taiwan

来源：

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年

关键词：

0.13 mu m; CMOS modeling; foundry; MS/mu Wave; SOC;

D O I：

10.1109/RFIC.2004.1320560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the first unitary set of geometry-scalable, wide-band compact models for all the components of a 0.13 mum RF CMOS technology and which are valid up to 50 GHz. Verification of the active and passive device models is achieved at the device level as well as by comparing measurements and simulation results of the S parameter response and jitter generation of high-speed circuits operating above 10 GHz from a single 1.2-V supply.

引用

页码：167 / 170

页数：4

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