Optical gain at the F-band of oxidized silicon nanocrystals

被引：28

作者：

Dohnalova, K. ^{[1
]}

Zidek, K. ^{[1
,2
]}

Ondic, L. ^{[1
,2
]}

Kusova, K. ^{[1
]}

Cibulka, O. ^{[1
]}

Pelant, I. ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, VVI, CZ-16253 Prague 6, Czech Republic

[2] Charles Univ Prague, Fac Math & Phys, Dept Chem Phys & Opt, CZ-12116 Prague 2, Czech Republic

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 13期

关键词：

STIMULATED-EMISSION; POROUS-SILICON; BLUE EMISSION;

D O I：

10.1088/0022-3727/42/13/135102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper we present time-resolved optical gain spectroscopy using the variable stripe length technique in combination with the shifting excitation spot technique under pumping with nanosecond laser pulses. Measurements reveal positive optical gain on a nanosecond time scale at 430 nm (F-band), accompanied by spectral narrowing and a threshold behaviour of the amplified spontaneous emission as a function of the excitation intensity. We show that the presence of the slow-red (S-band) emission component critically influences the observation of stimulated emission from the F-band.

引用

页数：5

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