Optical gain at the F-band of oxidized silicon nanocrystals

被引:28
|
作者
Dohnalova, K. [1 ]
Zidek, K. [1 ,2 ]
Ondic, L. [1 ,2 ]
Kusova, K. [1 ]
Cibulka, O. [1 ]
Pelant, I. [1 ]
机构
[1] Acad Sci Czech Republ, Inst Phys, VVI, CZ-16253 Prague 6, Czech Republic
[2] Charles Univ Prague, Fac Math & Phys, Dept Chem Phys & Opt, CZ-12116 Prague 2, Czech Republic
关键词
STIMULATED-EMISSION; POROUS-SILICON; BLUE EMISSION;
D O I
10.1088/0022-3727/42/13/135102
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper we present time-resolved optical gain spectroscopy using the variable stripe length technique in combination with the shifting excitation spot technique under pumping with nanosecond laser pulses. Measurements reveal positive optical gain on a nanosecond time scale at 430 nm (F-band), accompanied by spectral narrowing and a threshold behaviour of the amplified spontaneous emission as a function of the excitation intensity. We show that the presence of the slow-red (S-band) emission component critically influences the observation of stimulated emission from the F-band.
引用
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页数:5
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