Dependence of the growth parameters on the in-plane distribution of 150 mm Φ size SiC epitaxial wafer

Homoepitaxial growth on 4H-SiC Si-face substrates with sizes corresponding to 150 mm was performed. The influence of growth conditions for epitaxial defect density and for polytype inclusions was investigated. A 150 mm size was realized by using two 76.2 mm wafers lined up in a radial direction. C/Si ratio and growth temperature are found to be a major parameter for controlling defect density and the polytype inclusions. The epitaxial film without polytype inclusions and the defect density with 1.0 cm(-2) were obtained by decreasing C/Si ratio to 1.0 and increasing growth temperature to 1700 C on the size corresponding to 150 mm. Under this condition, good carrier concentration and thickness uniformity of a/mean = 5.0 % and 4.1 % have been obtained with 150 mm wafer.