FT IR spectroscopy of silicon oxide and HfSiOx layer formation

被引：3
|
作者：
Kopani, M. [1 ]
Mikula, M. [2 ]
Pincik, E. [3 ]
Kobayashi, H. [4 ,5 ]
Takahashi, M. [6 ]
机构：
[1] Comenius Univ, Bratislava 81108, Slovakia
[2] Fac Chem & Food Technol STU, Bratislava 81237, Slovakia
[3] Inst Phys SAS, Bratislava 84511, Slovakia
[4] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
[5] Japan Sci & Technol Org, CREST, Ibaraki, Osaka 5670047, Japan
[6] Tokyo Univ Technol, Sch Comp Sci, Tokyo 1920982, Japan
来源：
APPLIED SURFACE SCIENCE | 2014年 / 312卷
基金：
日本学术振兴会;
关键词：
Hafnium oxide; Silicon oxide; Infrared spectroscopy; HAFNIUM OXIDE;
D O I：
10.1016/j.apsusc.2014.05.035
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Hafnium oxide is an interesting material for a broad range of applications. Infrared spectroscopy was used to study the impact of aqueous environment and mechanism of formation of 5 nm HfO2 films after nitric acid oxidation (NAOS) of n-doped Si (1 0 0) substrates. Samples were annealed in N-2 atmosphere at different temperatures 200-400 degrees C for 10 min. For NAOS pa ssivation 100% vapor of HNO3 (set A) and 98% aqueous solution (set B) was used. FTIR measurements reveal silicon oxide layer formation and formation of HfSiOx layer. There are differences in HfSiOx layer formation between samples of set A and B caused by different environment. This layer of samples set B is thinner because of Si-OH bonds that may inhibit formation of this layer. Absorption IR spectra of set A show more ordered SiOx layer in comparison with samples of set B. The structural properties of HfO2 are crucial for application in the future. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：117 / 119
页数：3
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