High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma

被引：4
|
作者：
Zhang, Liting [1 ]
Joo, Young-Hee [1 ]
Um, Doo-Seung [2 ]
Kim, Chang-Il [1 ]
机构：
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul, South Korea
[2] Sejong Univ, Dept Elect Engn, Seoul, South Korea
来源：
MATERIALS RESEARCH EXPRESS | 2020年 / 7卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
AZO; ACP; XPS; OES; ZNO;
D O I：
10.1088/2053-1591/abbbac
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the etching characteristics of aluminum-doped zinc oxide (AZO) thin films in an adaptively coupled plasma (ACP) system. The dry etching characteristics of AZO films were studied by changing the Cl-2/Ar gas mixing ratio, RF power, DC bias voltage. We determined the following optimized process conditions: RF power of 500 W, DC bias voltage of -100 V, process pressure of 15 mTorr. In Cl-2/Ar plasma (=50:50%), the maximum etching rate of AZO films is 70.45 nm min(-1). The ion composition of Cl-2/Ar plasma was determined by optical emission spectrometry (OES). The chemical reactions on the surface of AZO films were analyzed by x-ray photoelectron spectroscopy (XPS).
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页数：7
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