Scanning tunneling microscopy observations of indium segregation phenomena on GaInAs layer grown by molecular beam epitaxy

被引：0

作者：

Ohkouchi, S ^{[1
]}

Sugimoto, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

COMPOUND SEMICONDUCTORS 1998 | 1999年 / 162期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The surface structures on a cation-stabilized GaInAs layer grown on an InP(001) substrate were observed using a scanning tunneling microscopy (STM) multi-chamber system equipped with a molecular beam epitaxy facility. The STM image of a cation-stabilized GaInAs surface showed the same structure as that of an In-stabilized InAs surface, which means that the In-stabilized InAs layer was formed on the grown GaInAs layer as a result of the indium segregation. We have also observed the indium segregation phenomena on a GaAs/InAs heterostructure. The STM image of an InAs substrate on which an amount of GaAs equal to half a monolayer was deposited revealed the formation of an InAs layer on the top of a two-dimensionally grown GaAs layer. This InAs layer was caused by the segregation of indium atoms from the InAs substrate through the deposited GaAs layer.

引用

页码：517 / 521

页数：5

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