Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces

被引：30
|
作者：
Zheng, LX [1 ]
Xie, MH [1 ]
Tong, SY [1 ]
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
来源：
PHYSICAL REVIEW B | 2000年 / 61卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.61.4890
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Gallium (Ga) surface adsorption and desorption kinetics on 6H-SiC(0001) are investigated using reflection high-energy electron diffraction. It is found that for Ga adsorption, a wetting layer bonds strongly to the SiC(0001) surface. Additional Ga atoms form droplets on top of the wetting layer. The Ga droplets behave like a metallic liquid. The activation energies for desorption are determined to be 3.5 eV for Ga in the wetting layer and 2.5 eV for Ga in the droplets. It is further found that the desorption of Ga atoms from the wetting layer follows a zero-order kinetics, i.e., the desorption rate is independent of the number of adsorbed atoms.
引用
收藏
页码：4890 / 4893
页数：4
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