Growth of n-doped and p-doped GaAs nanowires by Au-assisted metalorganic chemical vapor deposition: effect of dopants flux rates

被引：1

作者：

Zhang, Peng ^{[1
,2
]}

Liu, Yan ^{[3
]}

Guo, Jingwei ^{[4
]}

Zhang, Xiaopin ^{[2
]}

机构：

[1] Hebei Vocat & Tech Coll Bldg Mat, Dept Mech & Elect Engn, Qinhuangdao 066004, Hebei, Peoples R China

[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[3] Yanshan Univ, Natl Engn Res Ctr, Qinhuangdao 066004, Peoples R China

[4] Chinese Acad Sci, Inst Microelect, Lab Nano Fabricat & Novel Devices Intergrat Techn, Beijing 100029, Peoples R China

来源：

ADVANCED TECHNOLOGIES IN MANUFACTURING, ENGINEERING AND MATERIALS, PTS 1-3 | 2013年 / 774-776卷

基金：

中国博士后科学基金;

关键词：

GaAs; nanowires; n-doped; p-doped;

D O I：

10.4028/www.scientific.net/AMR.774-776.860

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N-doped and p-doped GaAs nanowires (NWs) are grown on GaAs (111) B substrate using vapor-liquid-solid (VLS) mechanism via a metalorganic chemical vapor deposition (MOCVD) system. It is found that for n-type doped NWs growth rate is proportional the flux rates of dopant and the structure is pure zinc blende without any faults. For p-type doped NWs with large flux rates, there is a critical length, beyond which NWs will be kinked.

引用

页码：860 / +

页数：2