A Thin-film SOI 180nm CMOS RF Switch

被引：0
|
作者：
Wolf, R. [1 ]
Joseph, A. [1 ]
Botula, A. [1 ]
Slinkman, J. [1 ]
机构：
[1] IBM Microelect, Essex Jct, VT 05452 USA
来源：
2009 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUTS IN RF SYSTEMS, DIGEST OF PAPERS | 2009年
关键词：
RF switch; thin film SOI; wireless; CMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a single pole, single throw (SPST) 180nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching times are competitive with switch applications utilizing GaAs pHEMT and silicon-on-sapphire technologies.
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页码：144 / 147
页数：4
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