A Low-Power K-Band Divide-by-5 Injection-Locked Frequency Divider

被引:0
|
作者
Chang, Yu-Hsin [1 ]
Chiang, Yen-Chung [1 ]
机构
[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung, Taiwan
关键词
CMOS process technology; cross-coupled pair; divide-by-5; ILFD; K-band; low power; locking range; DESIGN; WAVE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-power K-band divide-by-5 injection locked frequency divider (ILFD) implemented in the 0.18-mu m CMOS process technology, is proposed in this paper. By utilizing a differential injected pair formed by cross-coupled transistors and a stacked cross-coupled pair architecture, the fourth order harmonic of the proposed ILFD is enhanced to realize divide-by 5 function without adopting an LC filter. Thus, its performances are improved, including the power consumption and the locking range without using tuning varactors. A built-in balun is adopted before the gate terminals of the injected transistors to generate the differential input signals. The input locking range of the proposed divide-by-5 ILFD is from 21.1 to 22.1 GHz under 0-dBm input power levels, corresponding to 1-GHz maximum locking range. The core circuit only consumes a 3.75 mW dc power from a 1.5-V supply.
引用
收藏
页码:289 / 292
页数:4
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