Study of lithography profiles developed on non-planar Si surfaces

被引：18

作者：

Sirakoulis, GC ^{[1
]}

Karafyllidis, I ^{[1
]}

Mardiris, V ^{[1
]}

Thanailakis, A ^{[1
]}

机构：

[1] Democritus Univ Thrace, Dept Elect & Comp Engn, Lab Elect & Elect Mat Technol, GR-67100 Xanthi, Greece

来源：

NANOTECHNOLOGY | 1999年 / 10卷 / 04期

关键词：

D O I：

10.1088/0957-4484/10/4/311

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A tested, verified, and calibrated lithography simulator, based on cellular automata, is used to study phenomena, the effects of which are becoming more pronounced as the integrated circuits (ICs) are pushed deeper into the nanometre region. Lithography profiles developed on non-planar Si surfaces, where a step or a sloped line is present, were studied. Numerical experiments that elucidate effects such as the resist surface roughness on the developed profiles, as well as the effect of defects located into the resist bulk, in the presence of non-planar Si surfaces, are also presented. These effects are expected to be more pronounced as the integrated circuits are pushed deeper into the nanometre region.

引用

页码：421 / 427

页数：7

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