Influence and mechanism of pressure on SF6 decomposition components of gas-insulated switchgear under positive DC partial discharge

被引:4
|
作者
Cao, Zhengqin [1 ]
Tang, Ju [1 ,2 ]
Miao, Yulong [3 ]
Zhu, Ning [4 ]
Yao, Qiang [3 ]
Zeng, Fuping [2 ]
机构
[1] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Se, Chongqing 400044, Peoples R China
[2] Wuhan Univ, Sch Elect Engn, Wuhan 430072, Hubei, Peoples R China
[3] State Grid Chongqing Elect Power Co, Elect Power Res Inst, Chongqing 40112, Peoples R China
[4] Kunming Power Supply Bur China Southern Power Gri, Kunming 650051, Yunnan, Peoples R China
基金
中国国家自然科学基金;
关键词
SF6; decomposition; direct current; partial discharge; pressure;
D O I
10.1002/tee.22676
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To clarify the influence of pressure on SF6 decomposition under positive DC partial discharge (PD), SF6-positive DC partial discharge decomposition experiments at different pressures were carried out. We found that the contents of SF6 primary decomposition products are proportional to openBdP/E. Keeping the chamber volume and external temperature constant, the difference of air chamber pressure means that the electronic mean free path is different. So, different pressures make a difference in the energy of free electrons obtained in a single flight, which results in the difference in the reaction rates of SF6 primary decomposition and further influences the formation of SF6 PD characteristic decomposition components. (c) 2018 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
引用
收藏
页码:1136 / 1141
页数:6
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