A resonant pressure micro sensor with a stress isolation layer

被引：0

作者：

Lu, Yulan ^{[1
,2
]}

Xie, Bo ^{[1
]}

Wei, Qiuxu ^{[1
,2
]}

Li, Yadong ^{[1
,2
]}

Shi, Xiaoqing ^{[1
,2
]}

Xiang, Chao ^{[1
,2
]}

Chen, Deyong ^{[1
]}

Wang, Junbo ^{[1
]}

Chen, Jian ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Elect, State Key Lab Transducer Technol, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100039, Peoples R China

来源：

2018 IEEE SENSORS | 2018年

基金：

中国国家自然科学基金;

关键词：

resonant pressure micro sensor; stress isolation; thermal hysteresis error; pressure hysteresis error;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a resonant pressure micro sensor with a stress isolation layer. This sensor consisted of a glass cap for hermetic package, an SOI layer as sensing elements and a glass base for stress isolation. These three layers were mounted through a three-stack anodic bonding process. The effectiveness of stress isolation was validated by both finite element analysis and experimental characterizations. Experimental results confirm the high performances of the developed sensors, including high linearity of 0.9999, high sensitivities of -25 Hz/kPa and low temperature compensation errors of 0.005% FS. In addition, the hysteresis errors of temperature and pressure are 0.1 ppm FS/C and 40 ppm respectively, which exhibited overwhelming advantages in comparison to non-stress-isolation counterparts (about 2 ppm FS/degrees C and 1616 ppm).

引用

页码：101 / 104

页数：4

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