Self-Limiting Deposition of Anatase TiO2 at Low Temperature by Pulsed PECVD

被引：17
|
作者：
Kubala, Nicholas G. [1 ]
Rowlette, Pieter C. [1 ]
Wolden, Colin A. [1 ]
机构：
[1] Colorado Sch Mines, Dept Chem Engn, Golden, CO 80401 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 07期
基金：
美国国家科学基金会;
关键词：
Fourier transform spectroscopy; infrared spectroscopy; phase transformations; plasma CVD; titanium compounds; X-ray diffraction; X-ray photoelectron spectra; ATOMIC LAYER DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; DIOXIDE THIN-FILMS; TITANIUM-DIOXIDE; ALUMINUM-OXIDE; PHOTOELECTROCHEMICAL PROPERTIES; DIELECTRIC PERFORMANCE; PLASMA; GROWTH; MECHANISMS;
D O I：
10.1149/1.3125287
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The self-limiting deposition of anatase TiO2 was accomplished by pulsed plasma-enhanced chemical vapor deposition (PECVD) using a simultaneous delivery of TiCl4 and O-2. The amorphous to anatase phase transition was examined as a function of temperature, plasma power, and film thickness. Films deposited at T=120 degrees C, with the plasma power set at 100 W were amorphous, containing residual amounts of chlorine. At 200 W, the films displayed an anatase structure, and no chlorine was detected by X-ray photoelectron spectroscopy. Spectroscopic ellipsometry, Fourier transform infrared, and X-ray diffraction measurements concur that a minimum film thickness of similar to 25 nm is required for the formation of the anatase phase.
引用
收藏
页码：H259 / H262
页数：4
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