Soft delay error effects in CMOS combinational circuits

被引:19
|
作者
Gill, BS [1 ]
Papachristou, C [1 ]
Wolff, FG [1 ]
机构
[1] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA
关键词
soft delay; soft errors; single event upsets (SEUs); soft error rate (SER);
D O I
10.1109/VTEST.2004.1299260
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Single event upsets (SEUs) are due to high energetic particle strike at sensitive nodes of CMOS combinational circuits. In this paper, we introduce a type of soft errors which manifests as soft delay. The soft delay is temporary delay in CMOS combinational circuits due to high energetic particle strike. We describe soft delay model which enables us to examine delay in CMOS combinational circuits due to particle strike. As technology scales down, the delay due to particle strike increases, and other factors such as V-dd scaling, fanout and transistor strength also contribute to increase the soft delay in CMOS combinational circuits.
引用
收藏
页码:325 / 330
页数:6
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