Electrical degradation caused by electro-static discharge pulse in ZnO-based multilayer varistor

被引:13
|
作者
Koga, Eiich [1 ]
Sawada, Noriko [1 ]
机构
[1] Panason Elect Devices Hokkaido Co Ltd, Dept Engn, Chitose, Hokkaido 0668502, Japan
来源
关键词
ZnO varistor; Schottky barrier; degradation; ESD; capacitance; grain boundary; GRAIN-BOUNDARIES;
D O I
10.4028/www.scientific.net/KEM.388.15
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The degradation of ZnO-based multilayer ceramic varistors (MLCV) caused by electro-static discharge (ESD) and its mechanism on Schottky barriers formed at grain boundaries were examined. ESD is an extremely fast pulse which rise time is less than 1 n see, and the typical voltage is around 8kV. Two degradations of current-voltage (I-V) characteristics occurred depending on ESD-voltage. The minor degradation at the early stage was caused only in the low-current region by a slight ESD pulse (=0.4kV). In contrast, the major degradation occurred over the wide current range of 1 mu to 1mA by a highly ESD-voltage (= 8kV). The failure of Schottky barriers by ESD was produced partially in the microstructure. The large degradation was probably caused by the extension of region of broken barriers. The properties of barriers among boundaries and the microstructure play a crucial role in the degradation. In addition, using C-V analysis was found to be extremely valuable for the detection of degradation in MLCV than I-V property.
引用
收藏
页码:15 / 18
页数:4
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