Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes

被引：0
|
作者：
Zhang, XX [1 ]
Zeng, YP
Wang, XG
Wang, BQ
Zhu, ZP
机构：
[1] Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Key Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
CHINESE PHYSICS | 2004年 / 13卷 / 09期
关键词：
resonant tunnelling diode; photoluminescence; negative differential resistance; integrated luminescence intensity;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.
引用
收藏
页码：1560 / 1563
页数：4
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