SiGe/Si power HBTs for X- to K-Band applications

被引：0
|
作者：
Mohammadi, S [1 ]
Ma, ZQ [1 ]
Park, J [1 ]
Bhattacharya, P [1 ]
Katehi, LPB [1 ]
Ponchak, GE [1 ]
Alterovitz, SA [1 ]
Strohm, KM [1 ]
Luy, JF [1 ]
机构：
[1] Univ Michigan, Dept EECS, Ann Arbor, MI 48109 USA
来源：
2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2002年
关键词：
D O I：
10.1109/RFIC.2002.1012070
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High performance power SiGe/Si HBTs at X-band (8.4 GHz), Ku-band (12.6GHz) and K-band (18GHz) have been demonstrated. Under continuous wave operation, a single 20-finger Si/Si0.75Ge0.25/Si (emitter area of 1200 mum(2) HBT, biased in class AB, delivers 28.5dBm (700 mW) of RF output power at X-band, 25.5dBm (350mW) at Ku-band and 22.5dBm (180mW) at K-band. These represent the state-of-the-art power performance of SiGe-based HBTs at frequencies above X-band. An in-depth analysis of the power performance of HBTs with different geometry and configuration is also presented, which will eventually serve as a design guide for SiGe/Si power HBTs at different frequency of operation.
引用
收藏
页码：373 / 376
页数：4
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