New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

被引：12

作者：

Jeon, Dae-Young ^{[1
,3
]}

Park, So Jeong ^{[1
,3
]}

Mouis, Mireille ^{[1
]}

Barraud, Sylvain ^{[2
]}

Kim, Gyu-Tae ^{[3
]}

Ghibaudo, Gerard ^{[1
]}

机构：

[1] Grenoble INP, IMEP LAHC, Minatec, F-38016 Grenoble, France

[2] CEA LETI Minatec, F-38054 Grenoble, France

[3] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

SOLID-STATE ELECTRONICS | 2013年 / 89卷

基金：

新加坡国家研究基金会;

关键词：

Junctionless transistors (JLTs); Extraction method; Bulk channel mobility; Flat-band voltage; 2D numerical simulation; Maserjian's-like function for g(m); NANOWIRE TRANSISTORS; MOS STRUCTURES; SILICON;

D O I：

10.1016/j.sse.2013.08.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (mu(bulk)) and flat-band voltage (V-fb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/g(m)(2)) vs gate voltage in the partially depleted operation regime (V-th < V-fb < V-fb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for g(m) of JLT devices. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：139 / 141

页数：3

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