A polarization-sensitive photodetector based on a AsP/MoS2 heterojunction

被引:6
|
作者
Ren Zhi-hui [1 ,2 ]
Zhong Mian-zeng [3 ]
Yang Jue-han [1 ]
Wei Zhong-ming [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China
来源
CHINESE OPTICS | 2021年 / 14卷 / 01期
基金
中国国家自然科学基金;
关键词
photodetectors; black arsenic phosphorus; heterojunction; polarization characteristics;
D O I
10.37188/CO.2020-0189
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The ability to detect linearly polarized light is an important index for evaluating polarized photo-electric detectors. Black arsenic phosphorus (b-AsP) is a relatively stable anisotropic material, and is sensitive to linearly polarized light because of its anisotropy inside its planar structure. The material has important application value in polarization detection. This paper introduces a polarization-sensitive photodetector based on AsP/MoS2. Due to the anisotropic light absorption of AsP, effective carrier collection and strong carrier transport capacity of MoS2, as well as the suppression of dark current by a van der Waals heterojunction, the performance of the photodector shows relatively large on/off ratios. Moreover, the photodector has a current optical responsivity of 0.27 A/W and a detectivity of 2x10(10) Jones, and more importantly, achieves a dichroic ratio of up to 3.06 at 638 nm. These experimental results show that AsP/MoS2 heterostructures have broad application prospects in the field of polarized photoelectricity detection.
引用
收藏
页码:135 / 144
页数:10
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