Fabrication of Uniform Gratings on Composite Semiconductors Using UV Nanoimprint Lithography

被引:5
|
作者
Ishizuka, Shugo [1 ]
Nakao, Masashi [2 ,4 ]
Mashiko, Shinro [2 ,4 ]
Mizuno, Jun [3 ]
Shoji, Shuichi [1 ]
机构
[1] Waseda Univ, Shinjyuku Ku, 3-4-1 Okubo, Tokyo 1698555, Japan
[2] Natl Inst Informat & Commun Technol, Future ICT Res Ctr, Nishi Ku, Kobe, Hyogo 6512492, Japan
[3] Waseda Univ, Nanotechnol Res Lab, Shinjyuku Ku, Tokyo 1620041, Japan
[4] Japan Sci & Technol Agcy, CREST, Tokyo, Japan
关键词
UV nanoimprint lithography; gratings; composite semiconductors; uniformity;
D O I
10.2494/photopolymer.22.213
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
A fabrication method of uniform gratings on composite semiconductors using ultraviolet nanoimprint lithography (UV-NIL) is described. Since the grating pattern was batch transferred to the resin on substrates in this process, a high throughput fabrication process is expected. Both the dry etching process and the wet etching process can be performed for composite semiconductors patterning. The uniformity of the pattern height on a 3 inch GaAs substrate is better than the standard deviation of 2.6.
引用
收藏
页码:213 / 217
页数:5
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