Fabrication of Uniform Gratings on Composite Semiconductors Using UV Nanoimprint Lithography

被引：5

作者：

Ishizuka, Shugo ^{[1
]}

Nakao, Masashi ^{[2
,4
]}

Mashiko, Shinro ^{[2
,4
]}

Mizuno, Jun ^{[3
]}

Shoji, Shuichi ^{[1
]}

机构：

[1] Waseda Univ, Shinjyuku Ku, 3-4-1 Okubo, Tokyo 1698555, Japan

[2] Natl Inst Informat & Commun Technol, Future ICT Res Ctr, Nishi Ku, Kobe, Hyogo 6512492, Japan

[3] Waseda Univ, Nanotechnol Res Lab, Shinjyuku Ku, Tokyo 1620041, Japan

[4] Japan Sci & Technol Agcy, CREST, Tokyo, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2009年 / 22卷 / 02期

关键词：

UV nanoimprint lithography; gratings; composite semiconductors; uniformity;

D O I：

10.2494/photopolymer.22.213

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

A fabrication method of uniform gratings on composite semiconductors using ultraviolet nanoimprint lithography (UV-NIL) is described. Since the grating pattern was batch transferred to the resin on substrates in this process, a high throughput fabrication process is expected. Both the dry etching process and the wet etching process can be performed for composite semiconductors patterning. The uniformity of the pattern height on a 3 inch GaAs substrate is better than the standard deviation of 2.6.

引用

页码：213 / 217

页数：5

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