Design of a Wideband Variable-Gain Amplifier With Self-Compensated Transistor for Accurate dB-Linear Characteristic in 65 nm CMOS Technology

被引:20
|
作者
Kong, Lingshan [1 ]
Liu, Hang [2 ]
Zhu, Xi [3 ]
Boon, Chirn Chye [1 ]
Li, Chenyang [1 ]
Liu, Zhe [1 ]
Yeo, Kiat Seng [2 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, VIRTUS, Singapore 639798, Singapore
[2] Singapore Univ Technol & Design, Engn Prod Dev Pillar, Singapore 487372, Singapore
[3] Univ Technol Sydney, Fac Engn & IT, Sch Elect & Data Engn, Ultimo, NSW 2007, Australia
基金
新加坡国家研究基金会;
关键词
Transistors; Gain; Generators; Logic gates; Wideband; Resistors; CMOS variable-gain amplifier; dB-linear; pseudo-exponential;
D O I
10.1109/TCSI.2020.2995725
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simple yet effective approach for variable-gain amplifier (VGA) design with accurate dB-linear characteristic is presented. In order to extend the bandwidth of the designed VGA with a minimized footprint, an inductorless-based approach is adopted. Moreover, a unique approach that exploits a self-compensated transistor to compensate dB-linear gain error is proposed. Consequently, the overall VGA has an accurate dB-linear inherent characteristic without using any additional exponential generator for gain control. To prove the concept, the designed VGA is fabricated in a standard 65 nm CMOS technology. The measured results show that the voltage gain of the designed VGA can be controlled from -19 dB to 21 dB with a gain error less than 1 dB. Meanwhile, more than 4 GHz of bandwidth can be achieved for the entire gain range. The power consumption of the VGA, excluding the output buffer, is 3.9 mW. The core circuit of this design only occupies an area of 0.012 mm(2).
引用
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页码:4187 / 4198
页数:12
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