Epitaxial growth in heterogeneous nucleation of pure aluminum

被引：10
|
作者：
Yang, L. [1 ]
Xia, M. [1 ]
Li, J. G. [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 20024, Peoples R China
来源：
MATERIALS LETTERS | 2014年 / 132卷
关键词：
Heterogeneous nucleation; Epitaxial growth; Lattice mismatch; Solidification; Interfaces; FILMS; DIFFRACTION; BEHAVIOR; SILICON;
D O I：
10.1016/j.matlet.2014.06.051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An epitaxial layer for heterogeneous nucleation was obtained through a controlled nucleation process, where liquid Al was nucleated by a selected single crystal alpha-Al2O3 substrate with large lattice misfit. Transmission electron microscopy analysis suggests an epitaxial layer at the new crystal/substrate interface. According to the results of energy-dispersive X-ray spectroscopy and selected area diffraction patterns, the epitaxial layer is composed of aluminum micro-twins. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：52 / 54
页数：3
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