机构:
Virginia Tech, Dept Mat Sci & Engn, 201A Holden Hall,445 Old Turner St, Blacksburg, VA 24061 USAVirginia Tech, Dept Mat Sci & Engn, 201A Holden Hall,445 Old Turner St, Blacksburg, VA 24061 USA
Farkas, Diana
[1
]
机构:
[1] Virginia Tech, Dept Mat Sci & Engn, 201A Holden Hall,445 Old Turner St, Blacksburg, VA 24061 USA
This paper reviews recent results in the simulation of the mechanical response of metallic microstructures at the atomic level. The role of the grain boundary network in deformation process is the concentration of this paper as studied by virtual tensile and nanoindentation tests. The grain boundary network is found to contribute to plastic deformation through the process of dislocation nucleation, absorption and transmission, as well as grain boundary accommodation mechanisms such as grain boundary sliding and migration. The microstructural grain boundary network is also critical to the nucleation and propagation of cracks. The challenges and opportunities in this area are discussed. (C) 2013 Published by Elsevier Ltd.
机构:
Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
Huang, HC
Gilmer, GH
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
Gilmer, GH
1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS,
1999,
: 102
-
105