High efficiency In2O3/c-Si heterojunction solar cells produced by rapid thermal oxidation

In this paper, Indium oxide (In2O3)/n-Si junction solar cells were prepared by novel rapid thermal oxidation (RTO) technique using halogen lamp at 300 degrees C/25 sec condition at static air. The fabricated solar cells subjected to post-deposition annealing at 450 degrees C/30 min and 450 degrees C/35 min. High conversion efficiencies ranging between 11.5% and 14.5% at AM1 condition for unannealed an annealed cells respectively were obtained without using frontal grid contact. The photovoltaic properties of solar cells before and after annealing are characterized and analyzed. Furthermore, the stability conditions and reliability of these cells have been tested.