Optical and Electrophysical Properties of Thin Zinc Oxide Films Doped with Scandium and Obtained by Laser Deposition

被引：1
|
作者：
Bosak, N. A. [1 ]
Chumakov, A. N. [1 ]
Shevchenok, A. A. [2 ]
Baran, L. V. [3 ]
Karoza, A. G. [1 ]
Malutina-Bronskaya, V. V. [4 ]
Raichenok, T. F. [1 ]
Sugak, M. G. [5 ]
机构：
[1] Natl Acad Sci Belarus, BI Stepanov Inst Phys, Minsk 220072, BELARUS
[2] Belarusian Natl Tech Univ, Minsk 220013, BELARUS
[3] Belarusian State Univ, Minsk 220030, BELARUS
[4] SSPA Opt Optoelect & Laser Technol, Minsk 220072, BELARUS
[5] NPC Natl Acad Sci Belarus Mat Sci, Minsk 220072, BELARUS
来源：
JOURNAL OF APPLIED SPECTROSCOPY | 2020年 / 87卷 / 05期
关键词：
high-frequency laser irradiation; scandium-doped zinc oxide; thin film structure; transmission spectra; luminescence spectra; electrophysical characteristics; ZNO FILMS; TRANSPARENT; CONDUCTIVITY;
D O I：
10.1007/s10812-020-01079-y
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Nanostructured thin films on a silicon substrate were obtained by high-frequency pulse-periodic laser action (f ~ 10-15 kHz) with wavelength lambda = 1.064 mu m and power density q = 85 MW/cm(2) on zinc oxide ceramic doped with scandium oxide in a vacuum chamber with pressure p = 2 center dot 10(-2) mm Hg. The morphology of the obtained films was studied by atomic-force microscopy. Features of the transmission spectra in the visible and near and middle infrared regions were shown. The luminescence spectra obtained by excitation at various wavelengths were practically unchanged. The electrophysical properties of the ZnO + 0.9% Sc2O3/Si heterostructure were analyzed. It was established that the main conduction mechanism is current limited by space charge in an oxide film with deep traps.
引用
收藏
页码：840 / 845
页数：6
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