Fast spin relaxation in InGaN/GaN multiple quantum wells

被引：1
|
作者：
Brown, J.
Wells, J. P. R.
Hashemizadeh, S. A.
Parbrook, P. J.
Wang, T.
Fox, A. M.
Mowbray, D. J.
Skolnick, M. S.
机构：
[1] Univ Sheffield, Dept Phys & Astron, Low Dimens Struct & Devices Grp, Sheffield S3 7RH, S Yorkshire, England
[2] Univ Sheffield, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 07期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1002/pssb.200565271
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report measurements of a fast spin relaxation in InGaN multi-quantum wells (MQW) using femtosecond circularly polarised pump-probe spectroscopy. These reveal quantum beats in the spin polarisation arising from a 1.6 meV fine structure splitting of the excitonic levels. We attribute this splitting to exchange interactions in the narrow quantum wells studied. The 5 K spin coherence time was measured to be 450 fs, a value which decreases by a factor of approximately two by 50 K. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1643 / 1646
页数：4
相关论文
共 50 条
  • [1] Slow spin relaxation observed in InGaN/GaN multiple quantum wells
    Julier, M
    Vinattieri, A
    Colocci, M
    Lefebvre, P
    Gil, B
    Scalbert, D
    Tran, CA
    Karlicek, RF
    Lascaray, JP
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 216 (01): : 341 - 345
  • [2] Polarization relaxation in InGaN/(In)GaN multiple quantum wells
    Zhang, Feng
    Ikeda, Masao
    Zhou, Renlin
    Liu, Jianping
    Zhang, Shuming
    Tian, Aiqin
    Wen, Pengyan
    Li, Deyao
    Zhang, Liqun
    Yang, Hui
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SC)
  • [3] Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection
    Chen, WM
    Buyanova, IA
    Nishibayashi, K
    Kayanuma, K
    Seo, K
    Murayama, A
    Oka, Y
    Thaler, G
    Frazier, R
    Abernathy, CR
    Ren, F
    Pearton, SJ
    Pan, CC
    Chen, GT
    Chyi, JI
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (19) : 1 - 3
  • [4] Radiative recombination in InGaN/GaN multiple quantum wells
    Bergman, JP
    Monemar, B
    Pozina, G
    Sernelius, BE
    Holtz, PO
    Amano, H
    Akasaki, I
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1571 - 1574
  • [5] Characteristics of nanoporous InGaN/GaN multiple quantum wells
    Wang, W. J.
    Yang, G. F.
    Chen, P.
    Yu, Z. G.
    Liu, B.
    Xie, Z. L.
    Xiu, X. Q.
    Wu, Z. L.
    Xu, F.
    Xu, Z.
    Hua, X. M.
    Zhao, H.
    Han, P.
    Shi, Y.
    Zhang, R.
    Zheng, Y. D.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2014, 71 : 38 - 45
  • [6] Microstructure studies of InGaN/GaN multiple quantum wells
    Lin, YS
    Hsu, C
    Ma, KJ
    Feng, SW
    Cheng, YC
    Chung, YY
    Liu, CW
    Yang, CC
    Chyi, JI
    [J]. CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, 2001, : 218 - 219
  • [7] Intersubband Transition in GaN/InGaN Multiple Quantum Wells
    Chen, G.
    Wang, X. Q.
    Rong, X.
    Wang, P.
    Xu, F. J.
    Tang, N.
    Qin, Z. X.
    Chen, Y. H.
    Shen, B.
    [J]. SCIENTIFIC REPORTS, 2015, 5
  • [8] Effect of annealing on InGaN/GaN multiple quantum wells
    Kim, TS
    Park, JY
    Cuong, TV
    Kim, HG
    Lee, HJ
    Suh, EK
    Hong, CH
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (05) : 871 - 875
  • [9] Intersubband Transition in GaN/InGaN Multiple Quantum Wells
    G. Chen
    X. Q. Wang
    X. Rong
    P. Wang
    F. J. Xu
    N. Tang
    Z. X. Qin
    Y. H. Chen
    B. Shen
    [J]. Scientific Reports, 5
  • [10] Optical investigation of InGaN GaN multiple quantum wells
    Wang, T
    Nakagawa, D
    Lachab, M
    Sugahara, T
    Sakai, S
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (21) : 3128 - 3130
12345