AC admittance measurement for sub-micron BJT

被引：0
|
作者：
Lee, TH [1 ]
Ma, JG [1 ]
Yeo, KS [1 ]
Do, MA [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, RF IC Grp, Singapore 639798, Singapore
来源：
ISIC-99: 8TH INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS, DEVICES & SYSTEMS, PROCEEDINGS | 1999年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
AC measurement data for the 0.6 mu m BJT is presented. The results show that the admittance of the output terminal of BJT is highly dependent on the frequency. These results are against the conventional small-signal equivalent circuit model of BJT where the output admittance is frequency independent.
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页码：502 / 505
页数：4
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