NiCo2S4 Nanotubes Anchored 3D Nitrogen-Doped Graphene Framework as Electrode Material with Enhanced Performance for Asymmetric Supercapacitors

被引:86
|
作者
Chen, Yiying [1 ]
Liu, Tao [1 ]
Zhang, Liuyang [1 ]
Yu, Jiaguo [1 ,2 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, 122 Luoshi Rd, Wuhan 430070, Hubei, Peoples R China
[2] King Abdulaziz Univ, Fac Sci, Jeddah 21589, Saudi Arabia
来源
基金
中国国家自然科学基金;
关键词
NiCo2S4; Nanotubes; 3D nitrogen-doped graphene framework; Melamine sponge; Asymmetric supercapacitor; COMPOSITE HOLLOW MICROSPHERES; IN-SITU GROWTH; NI FOAM; HYDROTHERMAL SYNTHESIS; CARBON NANOFIBERS; ARRAYS; OXIDE; CORE; NANOPARTICLES; EFFICIENT;
D O I
10.1021/acssuschemeng.9b00284
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
NiCo2S4 is considered as a promising candidate for high-performance supercapacitors as it stores energy through fast surface redox reactions. However, it suffers from severe aggregation which deteriorates their stability. Herein, uniformly distributed NiCo2S4 nanotubes anchored on a 3D ultrathin nitrogen (N)-doped graphene framework (NGF) are obtained via a facile hydrothermal method, followed by a sulfurization process. The NGF composed of conductive three-dimensional graphene scaffolds can not only ensure even distribution of NiCo2S4 but also facilitate electron transport. Meanwhile, NiCo2S4 nanotubes with hollow structures can shorten the diffusion pathway of electrolyte ions. The strong synergistic effect between NiCo2S4 nano tubes and the NGF substrate helps to obtain satisfactory electrochemical properties. Accordingly, the as-prepared NiCo2S4/NGF composite exhibits a specific capacitance of 1240 F g(-1) (558 C g(-1)) at 1 A g(-1), almost 2-fold of its counterpart NiCo2S4 (688.9 F g(-1)/310 C g(-1)). Moreover, the corresponding hybrid energy device (NiCo2S4/NGF\ \AC) demonstrates a superb energy density of 36.8 Wh kg(-1) and outstanding cycling stability. This admirable design of the NiCo2S4/NGF composite holds great promise as an electrode material in supercapacitor application.
引用
收藏
页码:11157 / 11165
页数:17
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