A SiGe-Based E-Band Power Amplifier with 17.7 dBm Output Power and 325-GHz GBW

被引：0
|
作者：
Furcian, Muhammad [1 ]
Ahmed, Faisal [1 ]
Stelzer, Andreas [1 ]
机构：
[1] Johannes Kepler Univ Linz, Inst Commun Engn & RF Syst, A-4040 Linz, Austria
来源：
2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年
关键词：
E-band communication; millimeter-wave circuits; power amplifier; silicon germanium;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-gain, wideband power amplifier (PA) in 0.18-mu m SiGe HBT technology covering the three high-speed E-band communication channels (71-76 GHz, 81-86 GHz and 92-95 GHz) is presented. The architecture is based on a class-A three stage cascode amplifier. Bandwidth enhancement is achieved using inter-stage lossy-matching and gain-staggering techniques. The PA demonstrates a peak small-signal gain of 23 dB and a saturated output power (P-sat) of 17.7dBm with a 14.8% power-added efficiency (PAE). With a 3-dB gain and P-sat bandwidth of about 23 GHz, it shows a fractional bandwidth of more than 27%. The PA draws 115mA from a 3.3-V supply.
引用
收藏
页码：57 / 60
页数：4
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