Optimization of alloy composition for high-performance strained-Si-SiGe n-channel MOSFETs

被引：16
|
作者：
Olsen, SH [1 ]
O'Neill, AG
Driscoll, LS
Chattopadhyay, S
Kwa, KSK
Waite, AM
Tang, YT
Evans, AGR
Zhang, J
机构：
[1] Univ Newcastle, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[2] Univ Southampton, Dept Elect & Comp Sci, Southampton S017 1BJ, Hants, England
[3] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Ctr Elect Mat & Devices, London SW7 2BW, England
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 07期
基金：
英国工程与自然科学研究理事会;
关键词：
drain current enhancement; mobility enhancement; n-MOSFETs; silicon-germanium (SiGe); strained-Silicon; thermal budget; transconductance enhancement; virtual substrate;
D O I：
10.1109/TED.2004.830656
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
On-state and off-state performance of strained-Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si-SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si0.75Ge0.25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics.
引用
收藏
页码：1156 / 1163
页数：8
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