Design and simulation of strained Si/SiGe dual channel MOSFETs

被引：0
|
作者：
Goyal, Puneet [1 ]
Moon, James E. [1 ]
Kurinec, Santosh K. [2 ]
机构：
[1] Rochester Inst Technol, Dept Elect Engn, Rochester, NY 14623 USA
[2] Rochester Inst Technol, Dept Microelect Engn, Rochester, NY 14623 USA
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：327 / +
页数：2
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