Auger depth profiling of thin SiC layers -: practical aspects for a better understanding of quantitative analysis

被引：2

作者：

Pieterwas, R ^{[1
]}

Kosiba, R ^{[1
]}

Ecke, G ^{[1
]}

Pezoldt, J ^{[1
]}

Rössler, H ^{[1
]}

机构：

[1] IGH Automat GmbH, D-40467 Langenfeld, Germany

来源：

THIRD INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 2000年 / 4064卷

关键词：

factor analysis; principal component analysis; indicator function; Auger electron spectroscopy;

D O I：

10.1117/12.375442

中图分类号：

TP31 [计算机软件];

学科分类号：

081202 ; 0835 ;

摘要：

The element sensitivity factors method and the factor analysis are the most important methods for quantification of Auger depth profiles. The present paper puts forward a criterion for the decision in which cases the use of factor analysis is necessary for the quantification. The presented criterion uses the fact, that changed chemical bonds via sample depth are connected with changed element sensitivity factors. A chosen SiC-Si sample was investigated by Target Factor Analysis. The influence of data pretreatment like data selection, normalisation and filtering are discussed.

引用

页码：281 / 287

页数：3

共 50 条

[1] Quantitative depth profiling of thin layers
Wetzig, K
Baunack, S
Hoffmann, V
Oswald, S
Prassler, F
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1997, 358 (1-2): : 25 - 31
[2] Quantitative depth profiling of thin layers
K. Wetzig
S. Baunack
V. Hoffmann
S. Oswald
F. Präßler
Fresenius' Journal of Analytical Chemistry, 1997, 358 : 25 - 31
[3] Interpretation of Auger depth profiles of thin SiC layers on Si
Gernot Ecke
Hans Rößler
Volker Cimalla
Jörg Pezoldt
Microchimica Acta, 1997, 125 : 219 - 222
[4] Interpretation of Auger Depth Profiles of Thin SiC Layers on Si
TU Ilmenau, Fak. F. Elektrotech. I., PF 0565, D-98684 Ilmenau, Germany
Mikrochim. Acta, 1 (219-222):
[5] Interpretation of Auger depth profiles of thin SiC layers on Si
Ecke, G
Rossler, H
Cimalla, V
Pezoldt, J
MIKROCHIMICA ACTA, 1997, 125 (1-4) : 219 - 222
[6] Quantitative Auger electron spectroscopy in thin film depth profiling
Max-Planck-Inst fuer Metallforschung, Stuttgart, Germany
Vacuum, 7-9 (607-612):
[7] Quantitative Auger electron spectroscopy in thin film depth profiling
Hofmann, S
VACUUM, 1997, 48 (7-9) : 607 - 612
[8] QUANTITATIVE AUGER SPUTTER DEPTH PROFILING OF VERY THIN NITRIDED OXIDE
BARLA, K
NICOLAS, D
PANTEL, R
VUILLERMOZ, B
STRABONI, A
CARATINI, Y
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : 3635 - 3642
[9] Simulation of Auger depth profiles of thin SiC - Layers with respect to atomic mixing, Auger electron escape depth and surface roughness
Ecke, G
Rossler, H
Wohner, T
Cimalla, V
Scheiner, J
Hofmann, S
ECASIA 97: 7TH EUROPEAN CONFERENCE ON APPLICATIONS OF SURFACE AND INTERFACE ANALYSIS, 1997, : 423 - 426
[10] Auger Depth Profiling of Carbonized SiC/Si Samples
Shahzad Naseem and Shazia Yasin(Centre for Solid State Pliysics
JournalofMaterialsScience&Technology, 1997, (06) : 499 - 502

← 1 2 3 4 5 →